, o ne. 20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (212) 227-6005 usa. fax: (973) 376-8960 pnp silicon planar epitaxial transistors ^ ho' ^' q ul> 448, a, o bc 450, a, b to-92 plastic package general purpose high voltage transistors. absolute maximum ratings (ta=25"c unless specified otherwise) description collector emitter voltage collector base voltage emitter base voltage collector current continuous total device dissipation? ta=25c derate above 25c total device dissipation? tc=25c derate above 25c operating and storage junction temperature range symbol test condition vceo vcbo vebo ic pd pd tj, tstg win 60 60 5 300 typ max 80 100 80 100 5 5 625 5 1.5 12 -55 to +150 units v v v ma mw mw/c w mw/c c thermal resistance junction to ambient junction to case rth(i-a) rth(j-c) 200 83.3 c/w c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. n.i setni-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (ta=25c unless specified otherwise) description collector emitter breakdownvoltage symbol test condition bvceo* lc=1ma.ib=0 BC446 bc448 bc450 collector base breakdown voltage emitter base breakdown collector-cut off current dc current gain BC446 bc448 bc450 voltage BC446 bc448 bc450 non suffix a b non suffix a b non suffix a b collector emitter saturation voltage base emitter saturation voltage base emitter on voltage bvcbo lc=100ua, ie=0 bvebo le=10ua, lc=0 icbo vcb =40v, ie =0 vcb =60v, ie =0 vcb =80v, ie =0 hpe* lc=2ma,vce=5v lc=2ma,vce=5v lc=100ma,vce-5v vce(sat) lc=100ma,lb=10ma vbe(sat) lc= 1 00ma, ib= 10ma vbe(on) lc=2ma,vce =5v lc=100ma,vce=5v* min typ max 60 80 100 60 80 100 5 100 100 100 50 460 120 220 180 460 50 100 160 50 60 90 0.25 0.85 0.55 0.70 1.2 units v v v v v v v na na na v v v v dynamics characteristics transition frequency pulse test : pulse width < 300^5, duty ft lc=50ma, vce=5v f=100mhz cycle <2%. 100 mhz
pin configuration 1, emitter 2. base 3 collector all diminsions in mm all dlnwi?lom fn mm unlwt spactftod othemtii item boot width body height body thickness pitch of component feed hole pitch feed hole centre to component centre distance between outer leads component alignment tape wc th hold-gown tape width hole position hold-down tape position lead wire clinch height component height length of snipped leads feed hole diameter total tape thickness lead - to - lead oi5tancef1 clinch height pull- out foftce symbol a1 a t p po p2 f ah w wo w1 wj ho hi l do i f2 h2 (p) specification m1n 4.0 48 39 sn nom 12.7 127 635 5,08 0 is 6 9 05 16 4 254 max 44 52 42 23,25 11 0 12 3 tol. tl t03 0.4 -06 -0! ?q5 02 # 02 *05 *02 i," remarks cumulative pitch eb ror1q mm/20 pitch tqbeuea3uredat bottom of clinch at top of body 11 03-06 notes 1 maximum alignment delation between leads not to be greater than b z tu 1 maximum mom-cumulative wahiahon between tape feed haes shall mot exc 1 mm in 21 , ), holdlwwn tape hoi to exceed betonq tht edge(s) of carrier tape mo tmere shail ffi no exposure of adhesive. 4 no more fman i consecuti^ uissna componemts wt permitted. s. a tape trailer, having at least three feed ho-es a?6 required after the last component ? splices shall not interfere with the sfflocket fkq ho.e3.
|
